FB180SA10

Vishay Semiconductor - Diodes Division FB180SA10

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  • FB180SA10
  • Vishay Semiconductor - Diodes Division
  • MOSFET N-CH 100V 180A SOT-227
  • Transistors - FETs, MOSFETs - Single
  • FB180SA10 數據表
  • SOT-227-4, miniBLOC
  • Tube
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 2268
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
FB180SA10
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Semiconductor - Diodes Division
Description
MOSFET N-CH 100V 180A SOT-227
Package
Tube
Series
HEXFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
480W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 108A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
10700 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
SOT-227-4, miniBLOC

FB180SA10 保障

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Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division
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