GeneSiC Semiconductor G3R160MT12D
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- G3R160MT12D
- GeneSiC Semiconductor
- SIC MOSFET N-CH 22A TO247-3
- Transistors - FETs, MOSFETs - Single
- G3R160MT12D 數據表
- TO-247-3
- Tube
-
無鉛/符合RoHS - 1549
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
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| Part Number G3R160MT12D |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer GeneSiC Semiconductor |
| Description SIC MOSFET N-CH 22A TO247-3 |
| Package Tube |
| Series G3R™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247-3 |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 123W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 22A (Tc) |
| Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id 2.69V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 800 V |
| Vgs (Max) ±15V |
| Drive Voltage (Max Rds On, Min Rds On) 15V |
| Package_case TO-247-3 |
G3R160MT12D 保障
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