IXYS IXFA8N50P3
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- IXFA8N50P3
- IXYS
- MOSFET N-CH 500V 8A TO263
- Transistors - FETs, MOSFETs - Single
- IXFA8N50P3 數據表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
無鉛/符合RoHS - 12337
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IXFA8N50P3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 500V 8A TO263 |
| Package Tube |
| Series HiPerFET™, Polar3™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 180W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 500 V |
| Current - Continuous Drain (Id) @ 25°C 8A (Tc) |
| Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id 5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 705 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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