IXYS IXFY4N85X
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- IXFY4N85X
- IXYS
- MOSFET N-CH 850V 3.5A TO252
- Transistors - FETs, MOSFETs - Single
- IXFY4N85X 數據表
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
無鉛/符合RoHS - 4654
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IXFY4N85X |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 850V 3.5A TO252 |
| Package Cut Tape (CT) |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252 (IXFY) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 150W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 850 V |
| Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 247 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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