IXYS IXTA3N100D2
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- IXTA3N100D2
- IXYS
- MOSFET N-CH 1000V 3A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA3N100D2 數據表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
無鉛/符合RoHS - 1417
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IXTA3N100D2 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1000V 3A TO263 |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 125W (Tc) |
| FET Type N-Channel |
| FET Feature Depletion Mode |
| Drain to Source Voltage (Vdss) 1000 V |
| Current - Continuous Drain (Id) @ 25°C 3A (Tc) |
| Rds On (Max) @ Id, Vgs 5.5Ohm @ 1.5A, 0V |
| Vgs(th) (Max) @ Id - |
| Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) - |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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