IXYS IXTD2N60P-1J
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- IXTD2N60P-1J
- IXYS
- MOSFET N-CH 600V 2A DIE
- Transistors - FETs, MOSFETs - Single
- IXTD2N60P-1J 數據表
- Die
- Bulk
-
無鉛/符合RoHS - 2953
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IXTD2N60P-1J |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 600V 2A DIE |
| Package Bulk |
| Series PolarHV™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 56W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 2A (Tc) |
| Rds On (Max) @ Id, Vgs 5.1Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case Die |
IXTD2N60P-1J 保障
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