WeEn Semiconductors NXPSC166506Q
- NXPSC166506Q
- WeEn Semiconductors
- SILICON CARBIDE POWER DIODE
- Diodes - Rectifiers - Single
- NXPSC166506Q 數據表
- TO-220-2
- Tube
- 無鉛/符合RoHS
- 27783
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number NXPSC166506Q |
Category Diodes - Rectifiers - Single |
Manufacturer WeEn Semiconductors |
Description SILICON CARBIDE POWER DIODE |
Package Tube |
Series - |
Mounting Type Through Hole |
Package / Case TO-220-2 |
Supplier Device Package TO-220AC |
Diode Type Silicon Carbide Schottky |
Current - Average Rectified (Io) 16A |
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 16 A |
Current - Reverse Leakage @ Vr 100 µA @ 650 V |
Capacitance @ Vr, F 534pF @ 1V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 650 V |
Speed No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) 0 ns |
Operating Temperature - Junction 175°C (Max) |
Package_case TO-220-2 |
NXPSC166506Q 保障
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• 質量保證
• 全球通行
• 具有競爭力的價格
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