Vishay Siliconix SI7430DP-T1-E3
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- SI7430DP-T1-E3
- Vishay Siliconix
- MOSFET N-CH 150V 26A PPAK SO-8
- Transistors - FETs, MOSFETs - Single
- SI7430DP-T1-E3 數據表
- PowerPAK® SO-8
- Cut Tape (CT)
-
無鉛/符合RoHS - 18515
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number SI7430DP-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 150V 26A PPAK SO-8 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® SO-8 |
| Supplier Device Package PowerPAK® SO-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 5.2W (Ta), 64W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 150 V |
| Current - Continuous Drain (Id) @ 25°C 26A (Tc) |
| Rds On (Max) @ Id, Vgs 45mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1735 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 8V, 10V |
| Package_case PowerPAK® SO-8 |
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