Taiwan Semiconductor Corporation TSM4N90CI C0G
- TSM4N90CI C0G
- Taiwan Semiconductor Corporation
- MOSFET N-CH 900V 4A ITO220AB
- Transistors - FETs, MOSFETs - Single
- TSM4N90CI C0G 數據表
- TO-220-3 Full Pack, Isolated Tab
- Tube
-
無鉛/符合RoHS
- 16348
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number TSM4N90CI C0G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description MOSFET N-CH 900V 4A ITO220AB |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package ITO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 38.7W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 900 V |
Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
Rds On (Max) @ Id, Vgs 4Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 955 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack, Isolated Tab |
TSM4N90CI C0G 保障
• 響應及時
• 質量保證
• 全球通行
• 具有競爭力的價格
• 供應鏈一站式配套服務
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