ZXMN3B04N8TA

Diodes Incorporated ZXMN3B04N8TA

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  • ZXMN3B04N8TA
  • Diodes Incorporated
  • MOSFET N-CH 30V 7.2A 8SO
  • Transistors - FETs, MOSFETs - Single
  • ZXMN3B04N8TA 數據表
  • 8-SOIC (0.154\", 3.90mm Width)
  • Cut Tape (CT)
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 2720
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
ZXMN3B04N8TA
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 30V 7.2A 8SO
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SO
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
7.2A (Ta)
Rds On (Max) @ Id, Vgs
25mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2480 pF @ 15 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
8-SOIC (0.154\", 3.90mm Width)

ZXMN3B04N8TA 保障

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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated was founded in 1968 in the United States, with its headquarters located in Plano, Texas and Milpitas, California. It is a S&P small cap 600 and Russell 3000 index company, as well as...
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